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1 / 1 1 n ??? n - channel mosfet jcs20n65h order codes ? marking ? package halogen free ? packaging device weight jcs20n65 wh - o - w - n - b jcs20n65 wh to - 247 no tube 5 .20 g(typ) jcs20n65f h - o - f - n - b jcs20n65f h to - 220mf no tube 2.20 g(typ) jcs20n65f h - r - f - n - b jcs20n65f h to - 220mf yes tube 2.20 g(typ) ? package ? main characteristics i d 20 a v dss 6 50 v rdson - max @vgs=10v 0. 5 ? qg - typ 4 5 nc ? ? ??? ? ? led ? applications ? high frequency switching mode power supply ? electronic ballast ? led power supply ? ? ? ? c rss ( ? 1 1 pf) ? ?? ? ??? ? ? dv/dt ? rohs ? features ? l ow gate charge ? low c rss (typical 1 1 pf ) ? fast switching ? 100% avalanche tested ? improved dv/dt capa bility ? rohs product ? order message to - 220mf to - 247 r
jcs20n65h 20 1 6 02c 2 / 1 1 ?? absolute ratings (tc=25 ) * ?? *drain current limited by maximum junction temperature ? parameter symbol ? value unit jcs20n65wh jcs20n65fh ???? dss 650 v ? d t=25 t=100 ? ? 1 drain current C dm 80 a ??? gss 30 v ? ? 2 single pulsed avalanche energy as 108 mj ? ? 1 avalanche current ar 20 a ?? ? 1 ar 20.7 mj ??? ? 3 peak diode recovery dv/dt ? d t c =25 - derate above 25 ??? j stg - 55 ?? l 300 r
jcs20n65h 20 1 6 02c 3 / 1 1 ? parameter symbol tests conditions min typ max units ? off C characteristics ??? drain - source voltage bv dss i d =250 a, v gs =0v 6 5 0 - - v ?? breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 - 0. 5 - v/ ???? zero gate voltage drain current i dss v ds = 6 5 0v,v gs =0v, t c =25 - - 1 0 a v ds = 52 0v, t c =125 - - 10 0 a ?? gate - body leakage current, forward i gssf v ds =0v, v gs =30v - - 100 na ?? gate - body leakage current, reverse i gssr v ds =0v, v gs = - 30v - - - 100 na ?? on - characteristics ? ? gate threshold voltage v gs(th) v ds = v gs , i d =250 a 3.0 - 5.0 v ?? static drain - source on - resistance r ds(on) v gs =10v , i d = 10 a - 0.4 4 0. 5 ? ? dynamic characteristics input capacitance c iss v ds =25v, v gs =0v, f=1.0mh z - 2 5 50 4 000 pf output capacitance c oss - 2 50 pf reverse transfer capacitance c rss - 1 1 pf r
jcs20n65h 20 1 6 02c 4 / 1 1 e lectrical c haracteristics switching characteristics ?? turn - on delay time t d (on) v dd = 30 0v,i d = 20 a,r g =25? note 4 5 - 5 6 128 ns ? turn - on rise time t r - 1 40 270 ns ?? turn - off delay time t d (off) - 8 0 3 50 ns ?? turn - off fall time t f - 5 0 1 2 0 ns ? total gate charge q g v ds = 52 0v , i d = 20 a v gs =10v note 4 5 - 4 5 80 nc ?? gate - source charge q gs - 15.0 - nc ?? gate - drain charge q gd - 1 7 - nc ????? drain - source diode characteristics and maximum ratings maximum continuous drain - source diode forward current i s - - 20 a maximum pulsed drain - source diode forward current i sm - - 80 a ? drain - source diode forward voltage v sd v gs =0v, i s = 20 a - - 1.45 v ?? reverse recovery time t rr v gs =0v, i s = 20 a di f /dt=100a/ s (note 4) - 6 60 - ns ? reverse recovery ch arge q rr - . 9.3 - c ? parameter symbol max unit jcs20n65wh jcs20n65fh ??? thermal resistance, junction to case r th(j - c) 0. 2 5 2 .0 1 /w ? thermal resistance, junction to ambient r th(j - a) 2 9.8 3 9.7 / w ? ? 1 ? 2 l = 0. 5 mh, i as = 20 a, v dd = 50 v, r g =25 ?, ? t j =25 3 i sd 9.5 a,di/dt 3 00a/ s,vddbv dss , ? t j =25 4 ? 300 s, ?? 2 5 ??? notes: 1 pulse width limited by maximum junction temperatur e 2 l= 0.5 mh, i as = 20 a, v dd =50v, r g =25 ?,starting t j =25 3 i sd 9.5 a,di/dt 3 00a/ s,vddbv dss , starting t j =25 4 pulse test pulse width 300s,duty cycle2 5 essentially independent of operating temperature r
jcs20n65h 20 1 6 02c 5 / 1 1 electrical characteristics (curves) on - region characteristics transfer characteristics on - resistance variation vs. drain current and gate voltage body diode forward voltage variation vs. sour ce current and temperature capacitance characteristics gate charge characteristics r
jcs20n65h 20 1 6 02c 6 / 1 1 electrical characteristics (curves) breakdown voltage variation vs. temperature on - resistance variation vs. temperature maximum safe oper ating area for jcs20n65 f h maximum drain current vs. case temperature maximum safe operating area for jcs20n65 wh r -75 -50 -25 0 25 50 75 100 125 150 0.8 0.9 1.0 1.1 1.2 notes: 1. v g s =0v 2. i d =250a bv ds (normalized) t j [ ]
jcs20n65h 20 1 6 02c 7 / 1 1 electrical characteristics (curves) transient thermal response curve for jcs20n65 wh r
jcs20n65h 20 1 6 02c 8 / 1 1 transient thermal response curve for jcs20n65 f h r
jcs20n65h 20 1 6 02c 9 / 1 1 ? pa ckage mechanical data to - 247 u nit mm r
jcs20n65h 20 1 6 02c 10 / 1 1 ? package mechanical data to - 2 20 mf u nit mm r
jcs20n65h 20 1 6 02c 11 / 1 1 ? 1. ????????? ???? ?? ???? 2. ????? ?? 3. ????? ?????? 4 . ??? note 1. jilin sino - microelectronics co., ltd sales its product either through direct sales or sales agen t , thus, for customers, when ordering , please check with our company. 2. we strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please dont be hesitate to contact us. 3. please do not exceed the absolute maximum ratings of the device when circuit designing. 4. jilin sino - microelectronics co . , ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. ?? ?????? ???? 99 ?? 132013 ? 86 - 432 - 6 4678411 86 - 432 - 6 4665812 ? www.hwdz.com.cn ? ??? 99 ?? 132013 86 - 432 - 6 4675588 6 4675688 6 4678411 : 86 - 432 - 6 4671533 conta ct jilin sino - microelectronics co., ltd. add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel 86 - 432 - 6 4678411 fax 86 - 432 - 6 4665812 web site www.hwdz.com.cn market department add: no. 99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel: 86 - 432 - 6 4675588 6 4675688 6 4678411 fax: 86 - 432 - 6 4671533 r

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